| PART |
Description |
Maker |
| DTD743ZE DTD743ZM |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| NSS30201MR6T1G |
30V, 3A, Low VCE(sat) NPN Transistor(30V, 3A, 低VCE(sat) NPN晶体 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
30 V, 3 A, Low VCE(sat) NPN Transistor
|
ONSEMI[ON Semiconductor]
|
| 2SB1386 |
Low VCE(sat). VCE(sat) = -0.35V (Typ.) Excellent DC current gain
|
TY Semiconductor Co., Ltd
|
| 2SB1115 |
World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
|
TY Semiconductor Co., Ltd
|
| 2SA2124 2SA2124-TD-E |
Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP
|
ON Semiconductor
|
| 30A02MH-TL-E |
Bipolar Transistor -30V, -0.7A, Low VCE(sat) PNP Single MCPH3
|
ON Semiconductor
|
| PCP1103 |
Bipolar Transistor, -30V, -1.5A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| NSS20600CF8T1G NSS20600CF8 |
20V 6A LOW VCE(sat) PNP High Current Transistor ChipFET™
20 V, 7.0 A, Low VCE(sat) PNP Transistor(20V, 7.0A, 低VCE(sat) PNP晶体
|
ON Semiconductor
|
| NSS20500UW3T2G |
20 V, 7.0 A, Low VCE(sat) PNP Transistor(20V, 7.0A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| IXGH28N60B |
Ultra Low VCE(sat) IGBT with Diode(VCES涓?00V锛?CE(sat)涓?.0V???缂??????朵?绠?甯?????锛?
|
IXYS CORP
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
| CMLM0605 CMLM0605BK |
200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SMD Module PNP Low VCE(SAT) & Low VF Schottky Diode
MULTI DISCRETE MODULE⑩ SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE?/a> SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
